Localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells
Abstract
We study localized in-gap states and quantum spin Hall effect in Si-doped InAs/GaSb quantum wells. We propose a model with donor and/or acceptor impurities to describe Si dopants. This model shows in-gap bound states and wide conductance plateau with the quantized value 2e2/h in light dopant concentration, consistent with recent experiments by Du et al. (Lingjie Du et al., arXiv:1306.1925). We predict a conductance dip structure due to backward scattering in the region where the localization length ξ is comparable with the sample width Ly but much smaller than the sample length Lx.
- Publication:
-
Physical Review B
- Pub Date:
- May 2014
- DOI:
- 10.1103/PhysRevB.89.195104
- arXiv:
- arXiv:1310.4051
- Bibcode:
- 2014PhRvB..89s5104X
- Keywords:
-
- 72.15.Rn;
- 72.20.-i;
- 73.20.Fz;
- 73.63.Hs;
- Localization effects;
- Conductivity phenomena in semiconductors and insulators;
- Weak or Anderson localization;
- Quantum wells;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4+pages main text including 4 figures, supplementary materials with 3 figures are included