Electronic structure of the negatively charged silicon-vacancy center in diamond
Abstract
The negatively charged silicon-vacancy (SiV-) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a <111 > aligned split-vacancy structure with D3 d symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.
- Publication:
-
Physical Review B
- Pub Date:
- June 2014
- DOI:
- 10.1103/PhysRevB.89.235101
- arXiv:
- arXiv:1310.3131
- Bibcode:
- 2014PhRvB..89w5101R
- Keywords:
-
- 71.55.Cn;
- 61.72.jn;
- 81.05.ug;
- Elemental semiconductors;
- Color centers;
- Condensed Matter - Materials Science
- E-Print:
- 8 pages, 8 figures