Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
Abstract
Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. This is a review of the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and a discussion of contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat.
- Publication:
-
Reviews of Modern Physics
- Pub Date:
- July 2014
- DOI:
- 10.1103/RevModPhys.86.855
- arXiv:
- arXiv:1310.1944
- Bibcode:
- 2014RvMP...86..855J
- Keywords:
-
- 75.50.Pp;
- 75.70.Tj;
- 75.76.+j;
- 75.78.-n;
- Magnetic semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 47 pages, 41 figures