Radiation and Magnetic Field Effects on New Semiconductor Power Devices for Hl-Lhc Experiments
Abstract
The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under γ, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.
- Publication:
-
Astroparticle, Particle, Space Physics and Detectors for Physics Applications - Proceedings of the 14th ICATPP Conference
- Pub Date:
- June 2014
- DOI:
- 10.1142/9789814603164_0106
- arXiv:
- arXiv:1310.1902
- Bibcode:
- 2014apsp.conf..664F
- Keywords:
-
- Physics - Instrumentation and Detectors;
- High Energy Physics - Experiment
- E-Print:
- doi:10.1142/9789814603164_0106