Bottom-up graphene nanoribbon field-effect transistors
Abstract
Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2013
- DOI:
- 10.1063/1.4855116
- arXiv:
- arXiv:1310.0495
- Bibcode:
- 2013ApPhL.103y3114B
- Keywords:
-
- field effect transistors;
- graphene;
- nanoribbons;
- 85.30.Tv;
- 81.05.ue;
- Field effect devices;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1063/1.4855116