Electron-Phonon Coupling in Wurtzite Semiconductors: Intervalley Scattering Selection Rules for Hexagonal GaN
Abstract
Selection rules are presented for electron-phonon scattering in GaN with the wurtzite crystal structure. The results are obtained for the interband scattering between the lowest conduction band ($\Gamma$-valley) and the second conduction band ($U$-valley). These selection rules are derived based on the original group-theoretical analysis of the crystal vibrations in GaN, which included detailed compatibility relations for all phonon modes.
- Publication:
-
arXiv e-prints
- Pub Date:
- September 2013
- DOI:
- 10.48550/arXiv.1310.0079
- arXiv:
- arXiv:1310.0079
- Bibcode:
- 2013arXiv1310.0079B
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 7 pages, 5 figures