Gate depletion of an InSb two-dimensional electron gas
Abstract
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (∼ -0.9 V).
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 2013
- DOI:
- 10.1063/1.4821106
- arXiv:
- arXiv:1309.4626
- Bibcode:
- 2013ApPhL.103l3502U
- Keywords:
-
- aluminium compounds;
- atomic layer deposition;
- dielectric materials;
- III-V semiconductors;
- indium compounds;
- semiconductor growth;
- semiconductor quantum wells;
- two-dimensional electron gas;
- 73.20.-r;
- 77.84.-s;
- Electron states at surfaces and interfaces;
- Dielectric piezoelectric ferroelectric and antiferroelectric materials;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 12 pages, 3 figures