Influence of homo-buffer layer on stress control of sputtered (Ba0.45,Sr0.55)TiO3 thin films on Pt-Si
Abstract
To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers, homo-buffer layer method was applied to eliminate Pt hillock formation. Thin BST homo-buffer layers were deposited at room temperature and subsequently the main BST layer was deposited at 650°C, Pt hillock free BST films were obtained with homo-buffer thickness above 5 nm. Relatively good electrical properties were obtained for BST thin films with 15 and 25 nm homo-buffer layer (T= 30 % at 5V and tan {\delta}= 0.018).
- Publication:
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arXiv e-prints
- Pub Date:
- September 2013
- DOI:
- 10.48550/arXiv.1309.1615
- arXiv:
- arXiv:1309.1615
- Bibcode:
- 2013arXiv1309.1615V
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 3 pages, 5 figures