Amplification and passing through the barrier of the exciton condensed phase pulse in double quantum wells

The peculiarities and the possibility of a control of exciton condensed pulse movement in semiconductor double quantum wells under the slot in the metal electrode are studied. The condensed phase has been considered phenomenologically with the free energy in Landau-Ginzburg form taking into account the finite value of the exciton lifetime. It was shown that the exciton condensed phase pulse moves along the slot driven by an external linear potential. If the exciton density is high enough for the formation of the condensed phase then the pulse moves maintaining a constant value of a maximum density during exciton lifetime, while the exciton gas phase pulse diffuses. The penetration of the exciton condensed phase pulse through a barrier and its stopping by the barrier have been studied. Additionally, it was shown that the exciton pulse in the condensed phase can be amplified and recovered after damping by an additional laser pulse. Solutions for the system of excitons in double quantum wells under the slot in the electrode under steady irradiation in the form of bright and dark autosolitons were found.