g-factor anisotropy in nanowire-based InAs quantum dots
Abstract
The determination and control of the electron g-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the g-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the g-factor from the splitting of Kondo resonances and find that it varies continuously in the range between |g*| = 5 and 15.
- Publication:
-
The Physics of Semiconductors
- Pub Date:
- December 2013
- DOI:
- 10.1063/1.4848434
- arXiv:
- arXiv:1309.0726
- Bibcode:
- 2013AIPC.1566..359D
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 2 pages, 2 figures