Thermoelectric properties of β-FeSi2
Abstract
We investigate the thermoelectric properties of β-FeSi2 using first principles electronic structure and Boltzmann transport calculations. We report a high thermopower for both p- and n-type β-FeSi2 over a wide range of carrier concentration and in addition find the performance for n-type to be higher than for the p-type. Our results indicate that, depending upon temperature, a doping level of 3 × 1020 to 2 × 1021 cm-3 may optimize the thermoelectric performance.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- October 2013
- DOI:
- 10.1063/1.4825217
- arXiv:
- arXiv:1308.6529
- Bibcode:
- 2013JAP...114o3704P
- Keywords:
-
- ab initio calculations;
- carrier density;
- doping profiles;
- electronic structure;
- iron compounds;
- semiconductor doping;
- semiconductor materials;
- thermoelectric power;
- 72.20.Pa;
- 72.80.Jc;
- 61.72.up;
- 71.20.Nr;
- Thermoelectric and thermomagnetic effects;
- Other crystalline inorganic semiconductors;
- Other materials;
- Semiconductor compounds;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1063/1.4825217