Proximity Effect in Graphene-Topological-Insulator Heterostructures
Abstract
We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the cases of both commensurate and incommensurate stacking. The incommensurability can be due to a twist angle between graphene and the TI surface or a lattice mismatch between the two systems. We find that the proximity of the TI induces in graphene a strong enhancement of the spin-orbit coupling that can be tuned via the twist angle.
- Publication:
-
Physical Review Letters
- Pub Date:
- March 2014
- DOI:
- 10.1103/PhysRevLett.112.096802
- arXiv:
- arXiv:1308.6287
- Bibcode:
- 2014PhRvL.112i6802Z
- Keywords:
-
- 73.20.-r;
- 73.22.Pr;
- 74.45.+c;
- 75.70.Tj;
- Electron states at surfaces and interfaces;
- Proximity effects;
- Andreev effect;
- SN and SNS junctions;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 6 pages, 4 figures. References added, figures updated