Single photon emission from site-controlled InGaN/GaN quantum dots
Abstract
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%-25% exhibited single photon emission at 10 K.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2013
- DOI:
- 10.1063/1.4830000
- arXiv:
- arXiv:1308.5908
- Bibcode:
- 2013ApPhL.103s2114Z
- Keywords:
-
- excitons;
- gallium compounds;
- III-V semiconductors;
- indium compounds;
- optical rotation;
- photoluminescence;
- semiconductor quantum dots;
- wide band gap semiconductors;
- 78.55.Cr;
- 78.67.Hc;
- 71.35.-y;
- 78.20.Ek;
- III-V semiconductors;
- Quantum dots;
- Excitons and related phenomena;
- Optical activity;
- Physics - Optics;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- 6 pages, 4 figures, 1 table