Schottky Collector Bipolar Transistor Without Impurity Doped Emitter and Base: Design and Performance
Abstract
In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an intrinsic silicon film to create the n emitter and the p base regions, respectively. Using two-dimensional device simulation, the performance of the proposed device has been evaluated. Our results demonstrate that the charge plasma based bipolar transistor with Schottky collector exhibits a high current gain and a better cut-off frequency compared to its conventional counterpart.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- September 2013
- DOI:
- 10.1109/TED.2013.2272943
- arXiv:
- arXiv:1308.4286
- Bibcode:
- 2013ITED...60.2956N
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- IEEE Trans. on Electron Devices, Vol.60, pp.2956-2959, September 2013