Electronic band gaps and transport properties in aperiodic bilayer graphene superlattices of Thue-Morse sequence
Abstract
We investigate electronic band structure and transport properties in bilayer graphene superlattices of Thue-Morse sequence. It is interesting to find that the zero-k¯ gap center is sensitive to interlayer coupling t ', and the centers of all gaps shift versus t ' at a linear way. Extra Dirac points may emerge at ky≠0, and when the extra Dirac points are generated in pairs, the electronic conductance obeys a diffusive law, and the Fano factor tends to be 1/3 as the order of Thue-Morse sequence increases. Our results provide a flexible and effective way to control the transport properties in graphene.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2013
- DOI:
- 10.1063/1.4826643
- arXiv:
- arXiv:1308.3965
- Bibcode:
- 2013ApPhL.103q2106L
- Keywords:
-
- electron spin polarisation;
- energy gap;
- graphene;
- photoemission;
- superlattices;
- 73.22.Pr;
- 71.20.Nr;
- 72.80.Vp;
- 73.61.Wp;
- 72.25.Dc;
- 79.60.Bm;
- Semiconductor compounds;
- Fullerenes and related materials;
- Spin polarized transport in semiconductors;
- Clean metal semiconductor and insulator surfaces;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 6 figures. Accepted for publication in Applied Physics Letters