Antiferroelectricity and ferroelectricity in epitaxially strained PbZrO3 from first principles
Abstract
Density-functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of experimentally accessible epitaxial strains -3%⩽η⩽4%. While ferroelectricity is favored for all compressive strains, for tensile strains the small energy difference between the nonpolar ground state and the alternative polar phase yields a robust antiferroelectric ground state. The coexistence of ferroelectricity and antiferroelectricity observed in thin films is attributed to a combination of strain and depolarization field effects.
- Publication:
-
Physical Review B
- Pub Date:
- November 2013
- DOI:
- 10.1103/PhysRevB.88.180102
- arXiv:
- arXiv:1307.7645
- Bibcode:
- 2013PhRvB..88r0102R
- Keywords:
-
- 77.84.-s;
- 77.65.Bn;
- 81.05.Zx;
- Dielectric piezoelectric ferroelectric and antiferroelectric materials;
- Piezoelectric and electrostrictive constants;
- New materials: theory design and fabrication;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 3 figures