Strain-induced effects on the magnetic and electronic properties of epitaxial Fe1-xCoxSi thin films
Abstract
We have investigated the Co-doping dependence of the structural, transport, and magnetic properties of ɛ-Fe1-xCoxSi epilayers grown by molecular beam epitaxy on silicon (111) substrates. Low energy electron diffraction, atomic force microscopy, x-ray diffraction, and high-resolution transmission electron microscopy studies have confirmed the growth of phase-pure, defect-free ɛ-Fe1-xCoxSi epitaxial films with a surface roughness of ∼1 nm. These epilayers are strained due to lattice mismatch with the substrate, deforming the cubic B20 lattice so that it becomes rhombohedral. The temperature dependence of the resistivity changes as the Co concentration is increased, being semiconducting for low x and metallic for x ≳0.3. The films exhibit the positive linear magnetoresistance that is characteristic of ɛ-Fe1-xCoxSi below their magnetic ordering temperatures Tord, as well as the huge anomalous Hall effect of order several μΩcm. The ordering temperatures are higher than those observed in bulk, up to 77 K for x =0.4. The saturation magnetic moment of the films varies as a function of Co doping, with a contribution of ∼1μB/ Co atom for x ≲0.25. When taken in combination with the carrier density derived from the ordinary Hall effect, this signifies a highly spin-polarized electron gas in the low x, semiconducting regime.
- Publication:
-
Physical Review B
- Pub Date:
- April 2014
- DOI:
- 10.1103/PhysRevB.89.134426
- arXiv:
- arXiv:1307.7301
- Bibcode:
- 2014PhRvB..89m4426S
- Keywords:
-
- 68.55.-a;
- 72.20.My;
- 73.50.Jt;
- Thin film structure and morphology;
- Galvanomagnetic and other magnetotransport effects;
- Condensed Matter - Materials Science
- E-Print:
- 9 pages, 10 figures