Temperature Dependence of the Electrical Transport Properties of Multilayer Graphene
Abstract
Multilayer graphene (MLG) thin films are deposited on silicon oxide substrates by mechanical exfoliation (or 'scotch-tape method') from Kish graphite. The thickness and number of layers are determined from both Atomic Force Microscopy (AFM) and Raman Spectroscopy. Electrical terminals are deposited on MLGs in a four-probe configuration by electron-beam lithography, gold/titanium thermal evaporation, and lift-off. The electrical resistance is measured from room temperature down to 2 K. The electrical resistance of the MLGs shows an increase with decreasing temperature, and then decreases after reaching a maximum value. These results are compared with recent experimental and theoretical data from the literature.
- Publication:
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arXiv e-prints
- Pub Date:
- July 2013
- DOI:
- 10.48550/arXiv.1307.1457
- arXiv:
- arXiv:1307.1457
- Bibcode:
- 2013arXiv1307.1457S
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Superconductivity
- E-Print:
- Nano Studies, 2013, 7, 71-76