Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon
Abstract
We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface—effectively a two-level system. Theoretical estimates show that the tunneling should be highly coherent but too fast to be measured by any conventional techniques. Our approach is instead to measure the time-averaged charge distribution of our dangling-bond pair by a capacitively coupled atomic-force-microscope tip in the presence of both a surface-parallel electrostatic potential bias between the two dangling bonds and a tunable midinfrared laser capable of inducing Rabi oscillations in the system. With a nonresonant laser, the time-averaged charge distribution in the dangling-bond pair is asymmetric as imposed by the bias. However, as the laser becomes resonant with the coherent electron tunneling in the biased pair the theory predicts that the time-averaged charge distribution becomes symmetric. This resonant symmetry effect should not only reveal the tunneling rate, but also the nature and rate of decoherence of single-electron dynamics in our system.
- Publication:
-
Physical Review B
- Pub Date:
- January 2014
- DOI:
- 10.1103/PhysRevB.89.035315
- arXiv:
- arXiv:1305.6359
- Bibcode:
- 2014PhRvB..89c5315S
- Keywords:
-
- 68.37.Ps;
- 66.35.+a;
- 71.55.-i;
- 03.67.-a;
- Atomic force microscopy;
- Quantum tunneling of defects;
- Impurity and defect levels;
- Quantum information;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- Phys. Rev. B 89, 035315 (2014)