Resistance of Ag-silicene-Ag junctions: A combined nonequilibrium Green's function and Boltzmann transport study
Abstract
For several years the electronic structure properties of the two-dimensional system silicene have been studied extensively. Electron transport across metal-silicene junctions, however, remains relatively unexplored. To address this issue, we developed and implemented a theoretical framework that utilizes the tight-binding Fisher-Lee relation to span nonequilibrium Green's function (NEGF) techniques, the scattering method, and semiclassical Boltzmann transport theory. Within this hybrid quantum-classical, two-scale framework, we calculated transmission and reflection coefficients of monolayer and bilayer Ag-silicene-Ag junctions using the NEGF method in conjunction with density functional theory; derived and calculated the group velocities; and computed resistance using the semiclassical Boltzmann equation. We found that resistances of these junctions are ∼0.08fΩm2 for monolayer silicene junctions and ∼0.3fΩm2 for bilayer ones; factors of ∼8 and ∼2, respectively, smaller than Sharvin resistances estimated via the Landauer formalism.
- Publication:
-
Physical Review B
- Pub Date:
- September 2013
- DOI:
- 10.1103/PhysRevB.88.125428
- arXiv:
- arXiv:1305.5285
- Bibcode:
- 2013PhRvB..88l5428W
- Keywords:
-
- 73.50.-h;
- 72.10.Fk;
- 73.40.-c;
- Electronic transport phenomena in thin films;
- Scattering by point defects dislocations surfaces and other imperfections;
- Electronic transport in interface structures;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 4 figures