Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence
Abstract
Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal between right- and left-handed circular polarization. By combining the measurement of the optical polarization state of band-edge luminescence and Monte Carlo simulations of carrier dynamics, we show that these very rich and complex phenomena are the result of the electron thermalization and cooling in the multi-valley conduction band of Ge. The circular polarization of the direct-gap radiative recombination is indeed affected by energy relaxation of hot electrons via the X valleys and the Coulomb interaction with extrinsic carriers. Finally, thermal activation of unpolarized L valley electrons accounts for the luminescence depolarization in the high temperature regime.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2013
- DOI:
- 10.48550/arXiv.1305.4024
- arXiv:
- arXiv:1305.4024
- Bibcode:
- 2013arXiv1305.4024P
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- Phys. Rev. B 88, 045204 (2013)