Single hole transport in a silicon metal-oxide-semiconductor quantum dot
Abstract
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si complementary MOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and reservoirs. Clear Coulomb blockade oscillations are observed, and source-drain biasing measurements show that it is possible to deplete the dot down to the few hole regime, with excited states clearly visible. The architecture is sufficiently versatile that a second hole dot could be induced adjacent to the first one.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2013
- DOI:
- 10.1063/1.4826183
- arXiv:
- arXiv:1304.2871
- Bibcode:
- 2013ApPhL.103p3508L
- Keywords:
-
- carrier density;
- Coulomb blockade;
- elemental semiconductors;
- excitons;
- hole mobility;
- MOSFET;
- multilayers;
- semiconductor quantum dots;
- silicon;
- 85.30.Tv;
- Field effect devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 4 figures. The following article has been submitted to Applied Physics Letters