Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier
Abstract
We have investigated electrical spin injection from Ni81Fe19 into an InAs quantum well through MgO tunneling barrier for potential application to InAs-based spin field effect transistor. Injected spin polarized current were detected in both nonlocal and local spin valve set-ups and the spin diffusion length and spin injection efficiency were analyzed. The spin diffusion length was estimated to be 1.6 {\mu}m in nonlocal set-up at 1.4 K. The spin polarization of Ni81Fe19/MgO/InAs as-deposited sample was relealed to be 6.9 %, while increased spin polarization of 8.9 % was observed by additional thermal treatment.
- Publication:
-
Applied Physics Express
- Pub Date:
- July 2014
- DOI:
- 10.7567/APEX.7.073001
- arXiv:
- arXiv:1304.1671
- Bibcode:
- 2014APExp...7g3001I
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.7567/APEX.7.073001