Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices
Abstract
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is then shaped into Hall-bar devices of various dimensions using optical lithography and dry-etching techniques. The devices' electrical properties are investigated at various temperatures using a cryogen-free dilution refrigerator.
- Publication:
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arXiv e-prints
- Pub Date:
- March 2013
- DOI:
- 10.48550/arXiv.1303.3326
- arXiv:
- arXiv:1303.3326
- Bibcode:
- 2013arXiv1303.3326E
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 2 pages Optoelectronic and Microelectronic Materials &