Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon
Abstract
The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- August 2013
- DOI:
- 10.1063/1.4818433
- arXiv:
- arXiv:1303.1203
- Bibcode:
- 2013JAP...114h3104D
- Keywords:
-
- elemental semiconductors;
- high-speed optical techniques;
- laser beam effects;
- periodic structures;
- polaritons;
- silicon;
- surface plasmons;
- surface structure;
- 68.47.Fg;
- 71.36.+c;
- 73.20.Mf;
- 68.35.bg;
- 61.80.Ba;
- 61.82.Fk;
- Semiconductor surfaces;
- Polaritons;
- Collective excitations;
- Semiconductors;
- Ultraviolet visible and infrared radiation effects;
- Condensed Matter - Materials Science;
- Physics - Optics;
- Physics - Plasma Physics
- E-Print:
- 11 pages, 8 figures, accepted for publication in Journal of Applied Physics