Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides
Abstract
We report density-functional-theory calculations of the electronic band structures and optical absorption spectra of two-dimensional crystals of Ga2X2 (X= S, Se, and Te). Our calculations show that all three two-dimensional materials are dynamically stable indirect-band-gap semiconductors with a sombrero dispersion of holes near the top of the valence band. We predict the existence of Lifshitz transitions—changes in the Fermi-surface topology of hole-doped Ga2X2—at hole concentrations nS=7.96×1013 cm-2, nSe=6.13×1013 cm-2, and nTe=3.54×1013 cm-2.
- Publication:
-
Physical Review B
- Pub Date:
- May 2013
- DOI:
- 10.1103/PhysRevB.87.195403
- arXiv:
- arXiv:1302.6067
- Bibcode:
- 2013PhRvB..87s5403Z
- Keywords:
-
- 73.61.Ga;
- 71.15.Mb;
- 73.20.-r;
- 78.66.Hf;
- II-VI semiconductors;
- Density functional theory local density approximation gradient and other corrections;
- Electron states at surfaces and interfaces;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- Phys. Rev. B 87, 195403 (2013)