Evidence of spin scattering and collection of hot electrons at different conduction minima in Si
Abstract
We observe unusual features in the bias dependence of spin transport in a Co/Au/NiFe spin valve fabricated on a highly textured Cu(100)/Si(100) Schottky interface, exploiting the local probing capabilities of a Ballistic electron magnetic microscope. This is ascribed to local differences in strain and the presence of misfit dislocations at the Schottky interface that enhances spin flip scattering and broaden the energy and angular distribution of the transmitted electrons. Cumulatively, these enable the transmitted hot electrons to probe the different conduction band minima in Si, giving rise to such bias dependent features in the magnetocurrent.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2013
- DOI:
- 10.1063/1.4819488
- arXiv:
- arXiv:1302.5404
- Bibcode:
- 2013ApPhL.103h2409P
- Keywords:
-
- cobalt;
- conduction bands;
- copper;
- dislocations;
- elemental semiconductors;
- field emission electron microscopy;
- galvanomagnetic effects;
- gold;
- hot carriers;
- iron alloys;
- nickel alloys;
- Schottky barriers;
- semiconductor-metal boundaries;
- silicon;
- spin polarised transport;
- spin valves;
- 73.40.Ns;
- 61.72.Ff;
- 72.25.Mk;
- 72.25.Rb;
- 73.20.At;
- 73.30.+y;
- Metal-nonmetal contacts;
- Direct observation of dislocations and other defects;
- Spin transport through interfaces;
- Spin relaxation and scattering;
- Surface states band structure electron density of states;
- Surface double layers Schottky barriers and work functions;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 12 pages, 5 figures