Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS₂. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS₂ are indistinguishable from that of mechanically exfoliated (x-) MoS₂, however, flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS₂ to x-MoS₂. This initial report on the behavior and properties of s-MoS₂ illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.