High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
Abstract
We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively independent of thickness (15-90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ∼50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2013
- DOI:
- 10.1063/1.4789365
- arXiv:
- arXiv:1212.6292
- Bibcode:
- 2013ApPhL.102d2104B
- Keywords:
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- carrier mobility;
- high electron mobility transistors;
- molybdenum compounds;
- silicon compounds;
- 85.30.Tv;
- Field effect devices;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 3 figures