Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide
Abstract
We demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy, which enables direct observation of both electron and hole injections at a Si/Al2O3 interface and overcomes the long-standing difficulty of detecting holes in IPE measurements. The observed electron and hole barrier heights are 3.5 ± 0.1 eV and 4.1 ± 0.1 eV, respectively. Thus, the bandgap of Al2O3 can be deduced to be 6.5 ± 0.2 eV, in good agreement with the value obtained by ellipsometry analysis. Our modeling effort reveals that, by using graphene, the carrier injection from the emitter is significantly enhanced and the contribution from the collector electrode is minimal.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2013
- DOI:
- 10.1063/1.4796169
- arXiv:
- arXiv:1212.5335
- Bibcode:
- 2013ApPhL.102l3106Y
- Keywords:
-
- alumina;
- electrochemical electrodes;
- electron-hole recombination;
- elemental semiconductors;
- energy gap;
- graphene;
- interface states;
- photoelectron spectra;
- photoemission;
- semiconductor-insulator boundaries;
- silicon;
- transparency;
- 72.80.Vp;
- 73.20.At;
- 78.67.Wj;
- 78.20.Ci;
- 79.60.Bm;
- 72.20.Jv;
- Surface states band structure electron density of states;
- Optical constants;
- Clean metal semiconductor and insulator surfaces;
- Charge carriers: generation recombination lifetime and trapping;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Physics - Optics
- E-Print:
- 15 pages, 5 figures