Scanning tunneling microscopy with InAs nanowire tips
Abstract
Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2012
- DOI:
- 10.1063/1.4769450
- arXiv:
- arXiv:1212.5143
- Bibcode:
- 2012ApPhL.101x3101F
- Keywords:
-
- electron microscopy;
- gallium arsenide;
- gold;
- III-V semiconductors;
- indium compounds;
- nanofabrication;
- nanolithography;
- nanowires;
- scanning tunnelling microscopy;
- semiconductor growth;
- vapour phase epitaxial growth;
- 81.05.Ea;
- 81.15.Kk;
- 81.16.Nd;
- 81.07.Gf;
- 07.79.Cz;
- 68.37.Ef;
- III-V semiconductors;
- Vapor phase epitaxy;
- growth from vapor phase;
- Nanolithography;
- Scanning tunneling microscopes;
- Scanning tunneling microscopy;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Appl. Phys. Lett. 101, 243101 (2012)