Electric-field control of the magnetic anisotropy in an ultrathin (Ga,Mn)As/(Ga,Mn)(As,P) bilayer
Abstract
We report on the electric control of the magnetic anisotropy in an ultrathin ferromagnetic (Ga,Mn)As/(Ga,Mn)(As,P) bilayer with competing in-plane and out-of-plane anisotropies. The carrier distribution and therefore the strength of the effective anisotropy are controlled by the gate voltage of a field effect device. Anomalous Hall effect measurements confirm that a depletion of carriers in the upper (Ga,Mn)As layer results in the decrease of the in-plane anisotropy. The uniaxial anisotropy field is found to decrease by a factor ∼4 over the explored gate-voltage range so that the transition to an out-of-plane easy-axis configuration is almost reached.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2013
- DOI:
- 10.1063/1.4798258
- arXiv:
- arXiv:1211.7055
- Bibcode:
- 2013ApPhL.102l2403N
- Keywords:
-
- electric field effects;
- ferromagnetic materials;
- gallium arsenide;
- gallium compounds;
- Hall effect;
- III-V semiconductors;
- interface magnetism;
- magnetic anisotropy;
- magnetic semiconductors;
- manganese compounds;
- 75.30.Gw;
- 75.50.Dd;
- 75.50.Pp;
- 75.70.Cn;
- 72.20.My;
- Magnetic anisotropy;
- Nonmetallic ferromagnetic materials;
- Magnetic semiconductors;
- Magnetic properties of interfaces;
- Galvanomagnetic and other magnetotransport effects;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1063/1.4798258