Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy
Abstract
We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45 T. This reveals a filling-factor-dependent, multicomponent anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E2g phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudomagnetic fields lead to increased scattering intensity inside the anticrossing gap, consistent with the experiments.
- Publication:
-
Physical Review Letters
- Pub Date:
- May 2013
- DOI:
- 10.1103/PhysRevLett.110.227402
- arXiv:
- arXiv:1211.6094
- Bibcode:
- 2013PhRvL.110v7402K
- Keywords:
-
- 78.30.Na;
- 71.70.Di;
- 76.40.+b;
- 78.20.Bh;
- Fullerenes and related materials;
- Landau levels;
- Diamagnetic and cyclotron resonances;
- Theory models and numerical simulation;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Phys. Rev. Lett. 110, 227402 (2013)