Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment
Abstract
Using angle-resolved photoelectron spectroscopy and ab initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Γ point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence-band maximum is located at the Γ point only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center.
- Publication:
-
Physical Review B
- Pub Date:
- March 2013
- DOI:
- 10.1103/PhysRevB.87.121111
- arXiv:
- arXiv:1210.4477
- Bibcode:
- 2013PhRvB..87l1111N
- Keywords:
-
- 71.15.-m;
- 71.20.-b;
- 71.70.Ej;
- 79.60.-i;
- Methods of electronic structure calculations;
- Electron density of states and band structure of crystalline solids;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Photoemission and photoelectron spectra;
- Condensed Matter - Materials Science
- E-Print:
- 8 pages, 4 figures