Doped Mott Insulators in (111) Bilayers of Perovskite Transition-Metal Oxides with a Strong Spin-Orbit Coupling
Abstract
The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit coupling. These models are characterized by the antiferromagnetic Heisenberg interaction and the anisotropic interaction whose form depends on the d orbital occupancy. From exact diagonalization analyses on finite clusters, the ground state phase diagrams are derived, including a Kitaev spin liquid phase in a narrow parameter regime for t2g systems. Slave-boson mean-field analyses indicate the possibility of novel superconducting states induced by carrier doping into the Mott-insulating parent systems, suggesting the present model systems as unique playgrounds for studying correlation-induced novel phenomena. Possible experimental realizations are also discussed.
- Publication:
-
Physical Review Letters
- Pub Date:
- February 2013
- DOI:
- 10.1103/PhysRevLett.110.066403
- arXiv:
- arXiv:1210.2290
- Bibcode:
- 2013PhRvL.110f6403O
- Keywords:
-
- 71.27.+a;
- 74.20.-z;
- Strongly correlated electron systems;
- heavy fermions;
- Theories and models of superconducting state;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- Main text: 5 pages, 3 figures. Supplementary material: 5 pages, 1 figures