Coherent Josephson phase qubit with a single crystal silicon capacitor
Abstract
We have incorporated a single crystal silicon shunt capacitor into a Josephson phase qubit. The capacitor is derived from a commercial silicon-on-insulator wafer. Bosch reactive ion etching is used to create a suspended silicon membrane; subsequent metallization on both sides is used to form the capacitor. The superior dielectric loss of the crystalline silicon leads to a significant increase in qubit energy relaxation times. T1 times up to 1.6 μs were measured, more than a factor of two greater than those seen in amorphous phase qubits. The design is readily scalable to larger integrated circuits incorporating multiple qubits and resonators.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2013
- DOI:
- 10.1063/1.4773996
- arXiv:
- arXiv:1210.1545
- Bibcode:
- 2013ApPhL.102a2602P
- Keywords:
-
- capacitors;
- dielectric losses;
- elemental semiconductors;
- integrated circuit metallisation;
- Josephson effect;
- resonators;
- silicon;
- silicon-on-insulator;
- sputter etching;
- 84.32.Tt;
- 84.40.Az;
- 85.40.Ls;
- Capacitors;
- Waveguides transmission lines striplines;
- Metallization contacts interconnects;
- device isolation;
- Condensed Matter - Superconductivity;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- 5 pages, 4 figures