Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films
Abstract
The atomic structure and composition of noninterfacial ITO and ITO-Si interfaces were studied with transmission electron microscopy and x-ray photoelectron spectroscopy (XPS). The films were deposited by dc magnetron sputtering on monocrystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiOx was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiOx interface layer thickness.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- June 2011
- DOI:
- 10.1063/1.3587174
- arXiv:
- arXiv:1210.0035
- Bibcode:
- 2011JAP...109k3532T
- Keywords:
-
- atomic structure;
- crystallisation;
- elemental semiconductors;
- heat treatment;
- indium compounds;
- nanofabrication;
- nanostructured materials;
- semiconductor growth;
- semiconductor thin films;
- silicon;
- sputter deposition;
- transmission electron microscopy;
- X-ray photoelectron spectra;
- 81.15.Cd;
- 68.55.A-;
- 81.40.Gh;
- 79.60.Bm;
- 68.55.ag;
- 68.37.Og;
- Deposition by sputtering;
- Nucleation and growth;
- Other heat and thermomechanical treatments;
- Clean metal semiconductor and insulator surfaces;
- Semiconductors;
- High-resolution transmission electron microscopy;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- J. Appl. Phys. 109, 113532 (2011)