Defect physics and electronic properties of Cu3PSe4 from first principles
Abstract
The p-type semiconductor Cu3PSe4 has recently been established to have a direct band gap of 1.4 eV and an optical absorption spectrum similar to GaAs [Foster , Appl. Phys. Lett.APPLAB0003-695110.1063/1.3656760 99, 181903 (2011)], suggesting a possible application as a solar photovoltaic absorber. Here we calculate the thermodynamic stability, defect energies and concentrations, and several material properties of Cu3PSe4 using a wholly GGA+U method (the generalized gradient approximation of density functional theory with a Hubbard U term included for the Cu-d orbitals). We find that two low energy acceptor defects, the copper vacancy VCu and the phosphorus-on-selenium antisite PSe, establish the p-type behavior and likely prevent any n-type doping near thermal equilibrium. The GGA+U defect calculation method is shown to yield more accurate results than the more standard method of applying post-calculation GGA+U-based band-gap corrections to strictly GGA defect calculations.
- Publication:
-
Physical Review B
- Pub Date:
- November 2013
- DOI:
- 10.1103/PhysRevB.88.195201
- arXiv:
- arXiv:1209.5763
- Bibcode:
- 2013PhRvB..88s5201F
- Keywords:
-
- 61.72.J-;
- 71.20.Nr;
- 71.15.Mb;
- 88.40.fh;
- Point defects and defect clusters;
- Semiconductor compounds;
- Density functional theory local density approximation gradient and other corrections;
- Condensed Matter - Materials Science
- E-Print:
- 8 pages, 4 figures