Dissipative transport in rough edge graphene nanoribbon tunnel transistors
Abstract
We have studied quantum transport in graphene nanoribbon tunnel field-effect transistors. Unlike other studies on similar structures, we have included dissipative processes induced by inelastic electron-phonon scattering and edge roughness in the nanoribbon self-consistently within a non-equilibrium transport simulation. Our results show that the dissipative scattering imposes a limit to the minimum OFF current and a minimum subthreshold swing that can be obtained even for long channel lengths where direct source-drain tunneling is inhibited. The edge roughness, in the presence of dissipative scattering, somewhat surprisingly, shows a classical behavior where it mostly reduces the maximum ON current achievable in this structure.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2012
- DOI:
- 10.1063/1.4772532
- arXiv:
- arXiv:1209.5483
- Bibcode:
- 2012ApPhL.101z3501Y
- Keywords:
-
- electron-phonon interactions;
- field effect transistors;
- graphene;
- nanoribbons;
- tunnel transistors;
- tunnelling;
- 85.30.Tv;
- 73.40.Gk;
- 85.30.Mn;
- Field effect devices;
- Tunneling;
- Junction breakdown and tunneling devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Accepted for publication in Applied Physics Letters