Negative photoconductance in SiO2(Co)/GaAs heterostructure in the avalanche regime
Abstract
Negative photoconductance of heterostructures of silicon dioxide films containing cobalt nanoparticles grown on gallium arsenide SiO2(Co)/GaAs has been observed in the avalanche regime. Light with the photon energy less than the bandgap energy of the GaAs creates holes trapped on defects within the GaAs bandgap. This suppresses the avalanche feedback and causes a reduction of the current flowing through the SiO2(Co)/GaAs heterostructure.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2012
- DOI:
- 10.1063/1.4770377
- arXiv:
- arXiv:1209.3303
- Bibcode:
- 2012ApPhL.101x2104L
- Keywords:
-
- cobalt;
- energy gap;
- gallium arsenide;
- hole traps;
- III-V semiconductors;
- nanoparticles;
- photoconductivity;
- silicon compounds;
- thin films;
- 72.40.+w;
- 73.50.Gr;
- 78.56.-a;
- 72.20.Jv;
- Photoconduction and photovoltaic effects;
- Charge carriers: generation recombination lifetime trapping mean free paths;
- Charge carriers: generation recombination lifetime and trapping;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 4 figures