Small-signal amplifier based on single-layer MoS2
Abstract
In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2012
- DOI:
- 10.1063/1.4738986
- arXiv:
- arXiv:1208.5202
- Bibcode:
- 2012ApPhL.101d3103R
- Keywords:
-
- amplifiers;
- analogue circuits;
- energy gap;
- molybdenum compounds;
- semiconductors;
- transistors;
- 84.30.Le;
- Amplifiers;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- Submitted version of the manuscript