Monolithic Growth of Ultrathin Ge Nanowires on Si(001)
Abstract
Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 2012
- DOI:
- 10.1103/PhysRevLett.109.085502
- arXiv:
- arXiv:1208.0666
- Bibcode:
- 2012PhRvL.109h5502Z
- Keywords:
-
- 81.07.Gf;
- 68.55.A-;
- 68.65.La;
- 81.16.Dn;
- Nucleation and growth;
- Quantum wires;
- Self-assembly;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 23 pages, 5 figures