Nature of the electronic band gap in lanthanide oxides
Abstract
Accurate electronic structures of the technologically important lanthanide/rare-earth sesquioxides (Ln2O3, with Ln=La,⋯,Lu) and CeO2 have been calculated using hybrid density functionals HSE03, HSE06, and screened exchange (sX-LDA). We find that these density functional methods describe the strongly correlated Ln f electrons as well as the recent G0W0@LDA+U results, generally yielding the correct band gaps and trends across the Ln period. For HSE, the band gap between O 2p states and lanthanide 5d states is nearly independent of the lanthanide, while the minimum gap varies as filled or empty Ln 4f states come into this gap. sX-LDA predicts the unoccupied 4f levels at higher energies, which leads to a better agreement with experiments for Sm2O3, Eu2O3, and Yb2O3.
- Publication:
-
Physical Review B
- Pub Date:
- March 2013
- DOI:
- 10.1103/PhysRevB.87.125116
- arXiv:
- arXiv:1208.0503
- Bibcode:
- 2013PhRvB..87l5116G
- Keywords:
-
- 71.20.Ps;
- 71.20.Eh;
- 77.84.Bw;
- Other inorganic compounds;
- Rare earth metals and alloys;
- Elements oxides nitrides borides carbides chalcogenides etc.;
- Condensed Matter - Materials Science
- E-Print:
- 7 pages, 4 figures, 2 tables