Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3
Abstract
We present a magnetoresistive—photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 (BFO) substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2012
- DOI:
- 10.1063/1.4731201
- arXiv:
- arXiv:1207.0314
- Bibcode:
- 2012ApPhL.100z2411K
- Keywords:
-
- bismuth compounds;
- cobalt alloys;
- enhanced magnetoresistance;
- iron alloys;
- magnetic anisotropy;
- magnetic thin films;
- magnetoelastic effects;
- magnetostriction;
- 75.80.+q;
- 72.15.Gd;
- 73.50.Jt;
- 75.30.Gw;
- Magnetomechanical and magnetoelectric effects magnetostriction;
- Galvanomagnetic and other magnetotransport effects;
- Magnetic anisotropy;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 4 figures, journal paper