Graphene growth on h-BN by molecular beam epitaxy
Abstract
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.
- Publication:
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Solid State Communications
- Pub Date:
- June 2012
- DOI:
- 10.1016/j.ssc.2012.04.005
- arXiv:
- arXiv:1204.2443
- Bibcode:
- 2012SSCom.152..975G
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Solid State Communications, 2012