Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II
Abstract
The magnetoresistance components ρ xx and ρ xy are measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of the temperature, field, and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for the sample with the hole density p = 2 × 1011 cm-2. This transition is due to the crossing of the 0↑ and 1↓ Landau levels. However, in another sample with p = 7.2 × 1010 cm-2, the 0↑ and 1↓ Landau levels coincide for angles θ = 0-70°. Only for θ > 70° do the levels start to diverge which, in turn, results in the energy gap opening.
- Publication:
-
Soviet Journal of Experimental and Theoretical Physics
- Pub Date:
- September 2012
- DOI:
- 10.1134/S1063776112080067
- arXiv:
- arXiv:1204.1144
- Bibcode:
- 2012JETP..115..480D
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages, 6 figures