Conduction, diffusion and noise of electrons in amorphous chalcogenides at low electric fields
Abstract
The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room temperatures and lower. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed for the case of the amorphous Ge2Sb2Te5.
- Publication:
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arXiv e-prints
- Pub Date:
- February 2012
- DOI:
- 10.48550/arXiv.1202.3608
- arXiv:
- arXiv:1202.3608
- Bibcode:
- 2012arXiv1202.3608B
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Physics - Computational Physics
- E-Print:
- This paper has been withdrawn by the authors due to misleading interpretation of results