Origin of Bulk Uniaxial Anisotropy in Zinc-Blende Dilute Magnetic Semiconductors
Abstract
It is demonstrated that the nearest-neighbor Mn pair on the GaAs (001) surface has a lower energy for the [1¯10] direction compared to the [110] case. According to the group theory and Luttinger’s method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.
- Publication:
-
Physical Review Letters
- Pub Date:
- June 2012
- DOI:
- 10.1103/PhysRevLett.108.237203
- arXiv:
- arXiv:1202.3295
- Bibcode:
- 2012PhRvL.108w7203B
- Keywords:
-
- 75.30.Gw;
- 61.43.-j;
- 68.35.bg;
- 75.50.Pp;
- Magnetic anisotropy;
- Disordered solids;
- Semiconductors;
- Magnetic semiconductors;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 1 figure