Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)
Abstract
We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2012
- DOI:
- 10.1063/1.3687190
- arXiv:
- arXiv:1112.4228
- Bibcode:
- 2012ApPhL.100i3101M
- Keywords:
-
- conduction bands;
- elemental semiconductors;
- graphene;
- intercalation compounds;
- monolayers;
- photoelectron spectra;
- scanning tunnelling microscopy;
- scanning tunnelling spectroscopy;
- semiconductor epitaxial layers;
- semiconductor-insulator boundaries;
- silicon;
- valence bands;
- 68.55.ap;
- 71.20.Tx;
- 79.60.Jv;
- 68.37.Ef;
- Fullerenes;
- Fullerenes and related materials;
- intercalation compounds;
- Interfaces;
- heterostructures;
- nanostructures;
- Scanning tunneling microscopy;
- Condensed Matter - Materials Science
- E-Print:
- 13 pages, 4 figures, to be published in Appl. Phys. Lett