Fast electro-optics of a single self-assembled quantum dot in a charge-tunable device
Abstract
The response of a single InGaAs quantum dot, embedded in a miniaturized charge-tunable device, to an applied GHz bandwidth electrical pulse is investigated via its optical response. Quantum-dot response times of 1.0 ± 0.1 ns are characterized via several different measurement techniques, demonstrating GHz-bandwidth electrical control. Furthermore, a novel optical detection technique based on resonant electron-hole pair generation in the hybridization region is used to map fully the voltage pulse experienced by the quantum dot, showing, in this case, a simple exponential rise.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- February 2012
- DOI:
- arXiv:
- arXiv:1111.5914
- Bibcode:
- 2012JAP...111d3112P
- Keywords:
-
- electro-optical devices;
- gallium arsenide;
- III-V semiconductors;
- indium compounds;
- self-assembly;
- semiconductor device measurement;
- semiconductor quantum dots;
- 85.30.De;
- Semiconductor-device characterization design and modeling;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 7 pages, 4 figures